CSD25202W15

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

64 ns

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Gate to Source Voltage (Vgs) :

-6V

Base Part Number :

CSD25202

Height :

625μm

Series :

NexFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

26m Ω @ 2A, 4.5V

Package / Case :

9-UFBGA, DSBGA

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

500mW Ta

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1.05V @ 250μA

Number of Terminations :

9

Length :

1.75mm

Width :

1.75mm

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 10V

FET Type :

P-Channel

DS Breakdown Voltage-Min :

20V

Rise Time :

12ns

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

4A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Continuous Drain Current (ID) :

4A

Number of Pins :

9

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Lead Free :

Lead Free

Factory Lead Time :

8 Weeks

Operating Mode :

ENHANCEMENT MODE

Feedback Cap-Max (Crss) :

27 pF

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Fall Time (Typ) :

28 ns

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-609 Code :

e1

Drain-source On Resistance-Max :

0.052Ohm

Element Configuration :

Single

Terminal Position :

BOTTOM

Turn On Delay Time :

15 ns

Terminal Form :

Ball