CSD88537ND

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Thickness :

1.58mm

Power Dissipation :

2.1W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Weight :

540.001716mg

Drain to Source Voltage (Vdss) :

60V

Base Part Number :

CSD88537

JESD-609 Code :

e4

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Rise Time :

15ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Terminal Form :

Gull wing

Height :

1.75mm

Radiation Hardening :

No

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.019Ohm

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Length :

4.9mm

Turn-Off Delay Time :

9 ns

Threshold Voltage :

3V

Series :

NexFET™

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 30V

Continuous Drain Current (ID) :

15A

Contact Plating :

Gold

Rds On (Max) @ Id, Vgs :

15m Ω @ 8A, 10V

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

8A

FET Feature :

Standard

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Pbfree Code :

yes

ECCN Code :

EAR99

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Width :

3.91mm

Factory Lead Time :

6 Weeks

Turn On Delay Time :

6 ns

Number of Pins :

8

Lead Free :

Lead Free

Max Power Dissipation :

2.1W

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Fall Time (Typ) :

19 ns

Mount :

Surface Mount

REACH SVHC :

No SVHC

Number of Elements :

2