DRDNB16W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Power Dissipation :

200mW

Operating Supply Voltage :

50V

Current Rating :

600mA

Base Part Number :

DRDNB16

Emitter Base Voltage (VEBO) :

5V

Width :

1.35mm

Package / Case :

6-TSSOP, SC-88, SOT-363

ECCN Code :

EAR99

Transistor Type :

NPN - Pre-Biased + Diode

Radiation Hardening :

No

Pin Count :

6

Published :

2008

Number of Elements :

1

Min Operating Temperature :

-55°C

Number of Pins :

6

Mount :

Surface Mount

Height :

1mm

Continuous Collector Current :

600mA

Voltage - Rated DC :

50V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Length :

2.2mm

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Max Breakdown Voltage :

50V

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Max Output Current :

600mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

10 k Ω

Factory Lead Time :

19 Weeks

Weight :

6.010099mg

Collector Emitter Voltage (VCEO) :

300mV

Frequency - Transition :

200MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN

Current - Collector Cutoff (Max) :

500nA

Element Configuration :

Single

Lead Free :

Lead Free

Transition Frequency :

200MHz

Max Collector Current :

600mA

Mounting Type :

Surface Mount

hFE Min :

56

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Number of Terminations :

6

Resistor - Base (R1) :

1 k Ω