DRDN005W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Frequency :

100MHz

Published :

2008

Base Part Number :

DRDN005

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Width :

1.35mm

ECCN Code :

EAR99

Power Dissipation :

200mW

Max Breakdown Voltage :

80V

Weight :

6.010099mg

Terminal Finish :

Matte Tin (Sn)

Collector Base Voltage (VCBO) :

45V

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

JESD-609 Code :

e3

Max Power Dissipation :

200mW

Gain Bandwidth Product :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Transistor Type :

NPN + Diode (Isolated)

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Transition Frequency :

100MHz

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

80V

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON

Voltage - Rated DC :

80V

Height :

1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Pbfree Code :

yes

Length :

2.2mm

Collector Emitter Saturation Voltage :

250mV

Transistor Application :

SWITCHING

Max Collector Current :

500mA

Polarity :

NPN

Radiation Hardening :

No

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

80V

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100nA

Pin Count :

6

Current Rating :

500mA