BC817-40,215
- Mfr.Part #
- BC817-40,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A TO236AB
- Stock
- 15,632,486
- In Stock :
- 15,632,486
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Published :
- 2009
- hFE Min :
- 250
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 250mW
- Pin Count :
- 3
- VCEsat-Max :
- 0.7 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Max Junction Temperature (Tj) :
- 150°C
- Ambient Temperature Range High :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- 150°C TJ
- Series :
- BC817
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 700mV
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Height :
- 1.1mm
- Datasheets
- BC817-40,215

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817-40,215 Overview
DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 500mA volts.
BC817-40,215 Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40,215 Applications
There are a lot of Nexperia USA Inc.
BC817-40,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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