DSS30101L-7
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- Mfr.Part #
- DSS30101L-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A SOT23-3
- Stock
- 75,595
- In Stock ：
- 75,595
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Published :
- 2004
- Weight :
- 7.994566mg
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Continuous Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 250MHz
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Max Power Dissipation :
- 600mW
- Collector Emitter Saturation Voltage :
- 200mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Base Part Number :
- DSS30101
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 250MHz
- Lead Free :
- Lead Free
- Datasheets
- DSS30101L-7
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS30101L-7 Overview
In this device, the DC current gain is 300 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 100mA, 1A.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.250MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
DSS30101L-7 Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
DSS30101L-7 Applications
There are a lot of Diodes Incorporated
DSS30101L-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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