FDC6305N

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Mfr.Part #
FDC6305N
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET 2N-CH 20V 2.7A SSOT6
Stock
330,664
In Stock :
330,664

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Max Junction Temperature (Tj) :
150°C
Terminal Form :
Gull wing
Number of Elements :
2
Length :
3mm
JESD-609 Code :
e3
Factory Lead Time :
10 Weeks
Continuous Drain Current (ID) :
2.7A
Turn On Delay Time :
5 ns
Transistor Element Material :
SILICON
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Height :
1.1mm
Width :
1.7mm
Mounting Type :
Surface Mount
Element Configuration :
Dual
Mount :
Surface Mount
Threshold Voltage :
900mV
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
6
FET Type :
2 N-Channel (Dual)
Dual Supply Voltage :
20V
Power Dissipation :
900mW
Rds On (Max) @ Id, Vgs :
80m Ω @ 2.7A, 4.5V
Max Power Dissipation :
960mW
Transistor Application :
SWITCHING
Series :
PowerTrench®
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
310pF @ 10V
Number of Channels :
2
Rise Time :
8.5ns
ECCN Code :
EAR99
FET Feature :
Standard
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Current Rating :
2.7A
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 4.5V
Voltage - Rated DC :
20V
Drain to Source Breakdown Voltage :
20V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Packaging :
Tape and Reel (TR)
Published :
1999
Resistance :
80mOhm
Gate to Source Voltage (Vgs) :
8V
Fall Time (Typ) :
8.5 ns
Weight :
36mg
Number of Terminations :
6
Radiation Hardening :
No
Power - Max :
700mW
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Turn-Off Delay Time :
11 ns
Contact Plating :
Tin
Datasheets
FDC6305N
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDC6305N from Xinshop,where excellence meets affordability. This product stands out with its Package / Case:SOT-23-6 Thin, TSOT-23-6, Mounting Type:Surface Mount, Number of Pins:6, Number of Channels:2, Operating Temperature:-55°C~150°C TJ, Number of Terminations:6, FDC6305N pinout, FDC6305N datasheet PDF, FDC6305N amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDC6305N ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDC6305N


FDC6305N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDC6305N       Description


   These N-channel low threshold 2.5V specify that the MOSFET is manufactured using an advanced PowerTritch process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance.

 

FDC6305N          Features

 

2.7 A, 20 V

RDS(on) = 0.08|? @ VGS = 4.5V

RDS(on) = 0.12|? @ VGS = 2.5V

Low gate charge (3.5nC typical)

Fast switching speed

High performance trench technology for extremelylow RDS(ON)

SuperSOT? -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick)


FDC6305N             Applications


This product is general usage and suitable for many different applications.



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