FDC653N

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Mfr.Part #
FDC653N
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET N-CH 30V 5A SUPERSOT6
Stock
3,985
In Stock :
3,985

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Published :
1997
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Drain Current-Max (Abs) (ID) :
5A
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation-Max :
1.6W Ta
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Number of Elements :
1
Width :
1.7mm
REACH SVHC :
No SVHC
Fall Time (Typ) :
12 ns
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Number of Channels :
1
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
5A Ta
Contact Plating :
Tin
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
35m Ω @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 15V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
6
Length :
3mm
Termination :
SMD/SMT
Number of Pins :
6
Height :
1.1mm
Current Rating :
5A
Transistor Application :
SWITCHING
Element Configuration :
Single
Vgs(th) (Max) @ Id :
2V @ 250μA
Pbfree Code :
yes
Transistor Element Material :
SILICON
Resistance :
35mOhm
Nominal Vgs :
1.7 V
Continuous Drain Current (ID) :
5A
Turn-Off Delay Time :
13 ns
Dual Supply Voltage :
30V
Drain to Source Breakdown Voltage :
30V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
FET Type :
N-Channel
Max Junction Temperature (Tj) :
150°C
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Dual
Radiation Hardening :
No
ECCN Code :
EAR99
Threshold Voltage :
1.7V
Voltage - Rated DC :
30V
Weight :
30mg
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Turn On Delay Time :
7.5 ns
Power Dissipation :
1.6W
Rise Time :
12ns
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Factory Lead Time :
10 Weeks
Datasheets
FDC653N
Introducing Transistors - FETs, MOSFETs - Single onsemi FDC653N from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:SOT-23-6 Thin, TSOT-23-6, Number of Channels:1, Number of Terminations:6, Number of Pins:6, FDC653N pinout, FDC653N datasheet PDF, FDC653N amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDC653N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDC653N


N-Channel Tape & Reel (TR) 35m Ω @ 5A, 10V ±20V 350pF @ 15V 17nC @ 10V SOT-23-6 Thin, TSOT-23-6

FDC653N Description


FDC653N N-Channel Enhancement Mode Power Field-Effect Transistors are made using a unique, high cell density technology called DMOS. This process is extremely dense and is designed to reduce the on-state resistance. These devices are specifically designed for applications with low voltage in notebook computers, mobile phones, PCMICA cards, and many other battery-powered circuits in which fast switching, as well as low power loss in the line.


FDC653N Features


RDS(ON) = 0.035 Ω @ VGS = 10 V
RDS(ON) = 0.055 Ω @ VGS = 4.5 V
Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities
High density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability



FDC653N Applications


Notebook computers
Portable phones
PCMICA cards
Battery powered circuits
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