FDC8602
- Mfr.Part #
- FDC8602
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET 2N-CH 100V 1.2A 6-SSOT
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Element Configuration :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Max Junction Temperature (Tj) :
- 150°C
- Series :
- PowerTrench®
- Turn On Delay Time :
- 3.5 ns
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 1.7ns
- Number of Terminations :
- 6
- Drain to Source Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- FET Feature :
- Standard
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Max Power Dissipation :
- 690mW
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Feedback Cap-Max (Crss) :
- 5 pF
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 2nC @ 10V
- Threshold Voltage :
- 3.2V
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 2.3 ns
- Width :
- 1.7mm
- Packaging :
- Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds :
- 70pF @ 50V
- Turn-Off Delay Time :
- 5.4 ns
- Continuous Drain Current (ID) :
- 1.2A
- Length :
- 3mm
- Drain-source On Resistance-Max :
- 0.35Ohm
- JEDEC-95 Code :
- MO-193AA
- Number of Elements :
- 2
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Height :
- 1.1mm
- Factory Lead Time :
- 35 Weeks
- FET Type :
- 2 N-Channel (Dual)
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Weight :
- 36mg
- Power Dissipation :
- 690mW
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 1.2A, 10V
- Number of Pins :
- 6
- Datasheets
- FDC8602

FDC8602 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDC8602 Description
The N-channel MOSFET is produced using an advanced Power Tritch process optimized for RDS (conduction), switching performance and ruggedness.
FDC8602 Features
Max rDS(on) = 350 m Ω at VGS = 10 V, ID = 1.2 A
Max rDS(on) = 575 m Ω at VGS = 6 V, ID = 0.9 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
FDC8602 Applications
Distribution
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