FDMB668P
- Mfr.Part #
- FDMB668P
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 6.1A 8MLP
- Stock
- 10,643
- In Stock :
- 10,643
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.035Ohm
- Reach Compliance Code :
- Unknown
- Terminal Form :
- NO LEAD
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- 8-PowerWDFN
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 8
- Drain Current-Max (Abs) (ID) :
- 0.0061A
- Vgs (Max) :
- ±8V
- Transistor Application :
- SWITCHING
- FET Type :
- P-Channel
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 1.9W Ta
- JESD-30 Code :
- R-PDSO-N8
- Current - Continuous Drain (Id) @ 25°C :
- 6.1A Ta
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 6.1A, 4.5V
- Series :
- PowerTrench®
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- DS Breakdown Voltage-Min :
- 20V
- Qualification Status :
- COMMERCIAL
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Feedback Cap-Max (Crss) :
- 265 pF
- Transistor Element Material :
- SILICON
- Pin Count :
- 8
- Drain to Source Voltage (Vdss) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.085pF @ 10V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Datasheets
- FDMB668P
P-Channel Tape & Reel (TR) 35m Ω @ 6.1A, 4.5V ±8V 2.085pF @ 10V 59nC @ 10V 20V 8-PowerWDFN
FDMB668P Overview
A device's maximal input capacitance is 2.085pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 0.0061A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
FDMB668P Features
a 20V drain to source voltage (Vdss)
FDMB668P Applications
There are a lot of Rochester Electronics, LLC
FDMB668P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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