FDMC7200

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Mounting Type :

Surface Mount

Turn On Delay Time :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Rise Time :

4ns

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Packaging :

Tape and Reel (TR)

Weight :

186mg

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

23.5m Ω @ 6A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Dual

Number of Terminations :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

6A

Continuous Drain Current (ID) :

8A

Case Connection :

DRAIN SOURCE

Max Power Dissipation :

900mW

FET Feature :

Logic Level Gate

Power - Max :

700mW 900mW

Current - Continuous Drain (Id) @ 25°C :

6A 8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3mm

Terminal Form :

NO LEAD

Feedback Cap-Max (Crss) :

30 pF

Mount :

Surface Mount

Fall Time (Typ) :

6 ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

800μm

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Turn-Off Delay Time :

38 ns

Transistor Application :

SWITCHING

Number of Channels :

2

Width :

3mm

Series :

PowerTrench®

Pbfree Code :

yes

Number of Elements :

2

JESD-609 Code :

e4

Package / Case :

8-PowerWDFN

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

23 Weeks

Operating Temperature :

-55°C~150°C TJ