FDMC8200

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Weight :

186mg

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Length :

3mm

Continuous Drain Current (ID) :

8A

RoHS Status :

ROHS3 Compliant

Contact Plating :

Gold

Vgs(th) (Max) @ Id :

3V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

6 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Drain to Source Breakdown Voltage :

30V

Package / Case :

8-PowerWDFN

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Feedback Cap-Max (Crss) :

30 pF

Nominal Vgs :

2.3 V

ECCN Code :

EAR99

Threshold Voltage :

2.3V

Rds On (Max) @ Id, Vgs :

20m Ω @ 6A, 10V

Number of Pins :

8

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Mounting Type :

Surface Mount

Turn-Off Delay Time :

38 ns

Power - Max :

700mW 900mW

Factory Lead Time :

23 Weeks

Element Configuration :

Dual

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Turn On Time-Max (ton) :

30ns

Pulsed Drain Current-Max (IDM) :

40A

Series :

PowerTrench®

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN-SOURCE

Max Power Dissipation :

900mW

Width :

3mm

Resistance :

20mOhm

Current - Continuous Drain (Id) @ 25°C :

8A 12A

Terminal Form :

NO LEAD

Height :

750μm

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Qualification Status :

Not Qualified

Pbfree Code :

yes

Rise Time :

4ns

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.2W