FDMC86012
- Mfr.Part #
- FDMC86012
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 23A POWER33
- Stock
- 33
- In Stock :
- 33
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 230A
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- JEDEC-95 Code :
- MO-240BA
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 337 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5075pF @ 15V
- Turn On Delay Time :
- 20 ns
- Package / Case :
- 8-PowerWDFN
- Series :
- PowerTrench®
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±12V
- Power Dissipation :
- 54W
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 12V
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- 30V
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Weight :
- 152.7mg
- Mount :
- Surface Mount
- Rise Time :
- 11ns
- Continuous Drain Current (ID) :
- 23A
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta
- Number of Terminations :
- 5
- Power Dissipation-Max :
- 2.3W Ta 54W Tc
- Turn-Off Delay Time :
- 43 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 4.5V
- Factory Lead Time :
- 12 Weeks
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 2.7m Ω @ 23A, 4.5V
- Fall Time (Typ) :
- 8 ns
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.0027Ohm
- JESD-30 Code :
- S-PDSO-N5
- Radiation Hardening :
- No
- Datasheets
- FDMC86012

N-Channel Tape & Reel (TR) 2.7m Ω @ 23A, 4.5V ±12V 5075pF @ 15V 38nC @ 4.5V 8-PowerWDFN
FDMC86012 Description
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low RDS(on) has been maintained to
provide a sub-logic-level device.
FDMC86012 Features
Max rDS(on) = 2.7 m? at VGS = 4.5 V, ID = 23 A
Max rDS(on) = 4.7 m? at VGS = 2.5 V, ID = 17.5 A
High-performance technology for extremely low RDS(on)
Termination is Lead-free
100% UIL Tested
RoHS Compliant
FDMC86012 Applications
3.3 V input synchronous buck switch
Synchronous rectifier
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