FDMC86102
- Mfr.Part #
- FDMC86102
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7A/20A POWER33
- Stock
- 26,730
- In Stock :
- 26,730
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Nickel/Palladium (Ni/Pd)
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Avalanche Energy Rating (Eas) :
- 72 mJ
- Drain to Source Breakdown Voltage :
- 100V
- Threshold Voltage :
- 3.1V
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 30A
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 20A
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 7A, 10V
- Power Dissipation-Max :
- 2.3W Ta 41W Tc
- Power Dissipation :
- 2.3W
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 4 ns
- JESD-30 Code :
- S-PDSO-N5
- Length :
- 3.4mm
- Resistance :
- 24mOhm
- Number of Pins :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 965pF @ 50V
- Terminal Position :
- Dual
- Weight :
- 32.13mg
- Turn On Delay Time :
- 8 ns
- Nominal Vgs :
- 3.1 V
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Height :
- 950μm
- Factory Lead Time :
- 40 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Package / Case :
- 8-PowerTDFN
- Rise Time :
- 4ns
- Turn-Off Delay Time :
- 14 ns
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- PowerTrench®
- JEDEC-95 Code :
- MO-240BA
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- JESD-609 Code :
- e4
- Width :
- 3.4mm
- Drain Current-Max (Abs) (ID) :
- 7A
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 5
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta 20A Tc
- Datasheets
- FDMC86102

N-Channel Tape & Reel (TR) 24m Ω @ 7A, 10V ±20V 965pF @ 50V 18nC @ 10V 8-PowerTDFN
FDMC86102 Description
FDMC86102 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. This procedure maintains excellent switching performance while being tuned for the on-state resistance.
FDMC86102 Features
-
Shielded Gate MOSFET Technology
-
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A
-
Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A
-
Low Profile - 1 mm max in Power 33
-
100% UIL Tested
-
RoHS Compliant
FDMC86102 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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