FDMC86265P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

6.4 ns

Continuous Drain Current (ID) :

1.8A

JESD-609 Code :

e4

Pulsed Drain Current-Max (IDM) :

2A

Power Dissipation-Max :

2.3W Ta 16W Tc

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Form :

NO LEAD

Operating Temperature :

-55°C~150°C TJ

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

-150V

Case Connection :

DRAIN

Turn On Delay Time :

5.8 ns

Weight :

165.33333mg

Rise Time :

2.2ns

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

1A Ta 1.8A Tc

Turn-Off Delay Time :

8 ns

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

6 mJ

Drain to Source Voltage (Vdss) :

150V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Mounting Type :

Surface Mount

Height :

750μm

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 1A, 10V

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Length :

3.3mm

JESD-30 Code :

S-PDSO-N5

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Factory Lead Time :

10 Weeks

Number of Pins :

8

Number of Terminations :

5

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

25V

Mount :

Surface Mount

Package / Case :

8-PowerWDFN

Width :

3.3mm

Terminal Position :

Dual

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

1A

Number of Elements :

1

Element Configuration :

Single

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 75V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)