FDMC86320
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- Mfr.Part #
- FDMC86320
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 2,576
- In Stock ：
- 2,576
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- JESD-30 Code :
- S-PDSO-N5
- Rise Time :
- 8ns
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Power Dissipation :
- 40W
- Height :
- 750μm
- Number of Pins :
- 8
- Pulsed Drain Current-Max (IDM) :
- 50A
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 2.3W Ta 40W Tc
- Vgs (Max) :
- ±20V
- Weight :
- 165.33333mg
- Rds On (Max) @ Id, Vgs :
- 11.7m Ω @ 10.7A, 10V
- Width :
- 3.3mm
- Factory Lead Time :
- 10 Weeks
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Published :
- 2010
- Turn-Off Delay Time :
- 20 ns
- Number of Terminations :
- 5
- Element Configuration :
- Single
- Turn On Delay Time :
- 15 ns
- Series :
- PowerTrench®
- Fall Time (Typ) :
- 5 ns
- JESD-609 Code :
- e4
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Continuous Drain Current (ID) :
- 22A
- Package / Case :
- 8-PowerWDFN
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2640pF @ 40V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 10.7A Ta 22A Tc
- Length :
- 3.3mm
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Terminal Position :
- Dual
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 80V
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDMC86320
N-Channel Tape & Reel (TR) 11.7m Ω @ 10.7A, 10V ±20V 2640pF @ 40V 41nC @ 10V 8-PowerWDFN
FDMC86320 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 60 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2640pF @ 40V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.Using VGS=80V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 80V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 8V 10V volts (8V 10V).
FDMC86320 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 50A.
FDMC86320 Applications
There are a lot of ON Semiconductor
FDMC86320 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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