FDMC86520L
- Mfr.Part #
- FDMC86520L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 11,278
- In Stock :
- 11,278
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 3.3mm
- Continuous Drain Current (ID) :
- 13.5A
- Weight :
- 165.33333mg
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-PowerWDFN
- Avalanche Energy Rating (Eas) :
- 79 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 2.3W Ta 40W Tc
- Element Configuration :
- Single
- Packaging :
- Cut Tape (CT)
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 7.9m Ω @ 13.5A, 10V
- Drain Current-Max (Abs) (ID) :
- 22A
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- MO-229
- Drain-source On Resistance-Max :
- 0.0079Ohm
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 22A Tc
- Series :
- PowerTrench®
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Factory Lead Time :
- 14 Weeks
- Height :
- 750μm
- Fall Time (Typ) :
- 3.4 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e4
- Width :
- 3.3mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 32 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4550pF @ 30V
- Published :
- 2017
- JESD-30 Code :
- S-PDSO-N5
- Power Dissipation :
- 2.3W
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 60V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 5.2ns
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 15 ns
- Pulsed Drain Current-Max (IDM) :
- 60A
- Number of Terminations :
- 5
- Case Connection :
- DRAIN
- Datasheets
- FDMC86520L

N-Channel Cut Tape (CT) 7.9m Ω @ 13.5A, 10V ±20V 4550pF @ 30V 64nC @ 10V 8-PowerWDFN
FDMC7696 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse recovery performance.
FDMC86520L Features
Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
FDMC86520L Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
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