FDML7610S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

2.2W

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Nominal Vgs :

1.8 V

Transistor Element Material :

SILICON

Height :

750μm

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Number of Terminations :

6

Package / Case :

8-PowerWDFN

Number of Elements :

2

Weight :

300mg

Factory Lead Time :

23 Weeks

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

17A

Number of Pins :

8

Power Dissipation :

2.2W

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 15V

Element Configuration :

Dual

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Drain Current-Max (Abs) (ID) :

60A

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 12A, 10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

12A 17A

Width :

4.5mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Power - Max :

800mW 900mW

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Gold

Pulsed Drain Current-Max (IDM) :

40A

Turn-Off Delay Time :

31 ns

JESD-30 Code :

R-PDSO-N6

Length :

3mm

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

0.0075Ohm

FET Feature :

Logic Level Gate