FDMS3602S
- Mfr.Part #
- FDMS3602S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 7,805
- In Stock :
- 7,805
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Rds On (Max) @ Id, Vgs :
- 5.6m Ω @ 15A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 8
- JESD-30 Code :
- R-PDSO-N6
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Number of Terminations :
- 6
- Nominal Vgs :
- 1.8 V
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 15A 26A
- Weight :
- 90mg
- Pulsed Drain Current-Max (IDM) :
- 40A
- Length :
- 5mm
- Height :
- 1.05mm
- Factory Lead Time :
- 13 Weeks
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- DRAIN SOURCE
- Published :
- 2006
- Avalanche Energy Rating (Eas) :
- 50 mJ
- FET Type :
- 2 N-Channel (Dual)
- Max Power Dissipation :
- 1W
- Drain to Source Breakdown Voltage :
- 25V
- Package / Case :
- 8-PowerTDFN
- Rise Time :
- 4.2ns
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1680pF @ 13V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Fall Time (Typ) :
- 3.2 ns
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Width :
- 6mm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power Dissipation :
- 2.5W
- Turn-Off Delay Time :
- 31 ns
- Drain Current-Max (Abs) (ID) :
- 15A
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 26A
- FET Feature :
- Logic Level Gate
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Resistance :
- 5.6MOhm
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Number of Elements :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDMS3602S

FDMS3602S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3602S Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
FDMS3602S Features
Q1: N-Channel
Max RDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
Max RDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A
Q2: N-Channel
Max RDS(on) = 2.2 mΩ at VGS = 10 V, ID= 26 A
Max RDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A
Low-inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDMS3602S Applications
This product is general usage and suitable for many different applications.
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