FDMS3610S

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

39 ns

Number of Elements :

2

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

30A

JESD-30 Code :

R-PDSO-N6

Fall Time (Typ) :

4 ns

FET Feature :

Logic Level Gate

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual) Asymmetrical

Weight :

171mg

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

12V

Number of Channels :

2

Terminal Form :

NO LEAD

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 13V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

5m Ω @ 17.5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

25V

Number of Pins :

8

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Element Configuration :

Dual

Drain-source On Resistance-Max :

0.005ohm

Transistor Application :

SWITCHING

Mount :

Surface Mount

Case Connection :

DRAIN SOURCE

Current - Continuous Drain (Id) @ 25°C :

17.5A 30A

Turn On Delay Time :

11 ns

Package / Case :

8-PowerTDFN

Number of Terminations :

6

ECCN Code :

EAR99

JESD-609 Code :

e3

Factory Lead Time :

13 Weeks

Max Power Dissipation :

1W

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Drain Current-Max (Abs) (ID) :

17.5A

Rise Time :

5ns