FDS4770

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

JESD-609 Code :

e3

Series :

PowerTrench®

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0075Ohm

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

40V

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta

Input Capacitance (Ciss) (Max) @ Vds :

2.819pF @ 20V

Current - Continuous Drain (Id) @ 25°C :

13.2A Ta

Qualification Status :

COMMERCIAL

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 13.2A, 10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Number of Elements :

1

Terminal Position :

Dual

DS Breakdown Voltage-Min :

40V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

13.2A