FDS5670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Current :

10A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Published :

1999

ECCN Code :

EAR99

Width :

4mm

Power Dissipation :

2.5W

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 15V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Continuous Drain Current (ID) :

10A

Voltage :

60V

Rise Time :

10ns

Contact Plating :

Tin

Height :

1.5mm

Resistance :

14mOhm

Lead Free :

Lead Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks

Packaging :

Tape and Reel (TR)

Threshold Voltage :

2.4V

Terminal Form :

Gull wing

FET Type :

N-Channel

Number of Pins :

8

Fall Time (Typ) :

23 ns

Rds On (Max) @ Id, Vgs :

14m Ω @ 10A, 10V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Radiation Hardening :

No

Turn-Off Delay Time :

50 ns

Mounting Type :

Surface Mount

Current Rating :

10A

Power Dissipation-Max :

2.5W Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Dual

Number of Elements :

1

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

60V

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

60V

Turn On Delay Time :

16 ns

Length :

5mm

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Nominal Vgs :

2.4 V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Dual Supply Voltage :

60V