FDU8882
- Mfr.Part #
- FDU8882
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12.6A/55A IPAK
- Stock
- 17,391
- In Stock :
- 17,391
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- COMMERCIAL
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 3
- Case Connection :
- Isolated
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 30V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Drain Current-Max (Abs) (ID) :
- 35A
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Series :
- PowerTrench®
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 55W Tc
- Terminal Finish :
- MATTE TIN
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.26pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 12.6A Ta 55A Tc
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 11.5m Ω @ 35A, 10V
- JESD-30 Code :
- R-PSIP-T3
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.015Ohm
- Avalanche Energy Rating (Eas) :
- 41 mJ
- Mounting Type :
- Through Hole
- Datasheets
- FDU8882

N-Channel Tube 11.5m Ω @ 35A, 10V ±20V 1.26pF @ 15V 33nC @ 10V 30V TO-251-3 Short Leads, IPak, TO-251AA
FDU8882 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 41 mJ.A device's maximal input capacitance is 1.26pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 35A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDU8882 Features
the avalanche energy rating (Eas) is 41 mJ
a 30V drain to source voltage (Vdss)
FDU8882 Applications
There are a lot of Rochester Electronics, LLC
FDU8882 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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