FDW254P
- Mfr.Part #
- FDW254P
- Manufacturer
- onsemi
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 9.2A 8TSSOP
- Stock
- 906
- In Stock :
- 906
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 1.3W
- Rds On (Max) @ Id, Vgs :
- 12mOhm @ 9.2A, 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance :
- 5.878nF
- Mounting Type :
- Surface Mount
- Rds On Max :
- 12 mΩ
- Threshold Voltage :
- 600mV
- Resistance :
- 12mOhm
- REACH SVHC :
- No SVHC
- Width :
- 4.4mm
- Power Dissipation-Max :
- 1.3W Ta
- Number of Elements :
- 1
- Rise Time :
- 15ns
- Current - Continuous Drain (Id) @ 25°C :
- 9.2A Ta
- Drain to Source Breakdown Voltage :
- -20V
- Height :
- 1mm
- Min Operating Temperature :
- -55°C
- Supplier Device Package :
- 8-TSSOP
- Fall Time (Typ) :
- 15 ns
- Number of Pins :
- 8
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Drain to Source Resistance :
- 12mOhm
- Max Operating Temperature :
- 150°C
- Turn On Delay Time :
- 15 ns
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- -20V
- Lead Free :
- Lead Free
- Published :
- 2008
- Turn-Off Delay Time :
- 210 ns
- Vgs (Max) :
- ±8V
- Mount :
- Surface Mount
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5878pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 4.5V
- Series :
- PowerTrench®
- Continuous Drain Current (ID) :
- 9.2A
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Length :
- 3mm
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 8V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 20V
- Current Rating :
- -9.2A
- Datasheets
- FDW254P

P-Channel Tape & Reel (TR) 12mOhm @ 9.2A, 4.5V ±8V 5878pF @ 10V 96nC @ 4.5V 20V 8-TSSOP (0.173, 4.40mm Width)
FDW254P Description
FDW254P is a kind of P-channel 1.8 V specified PowerTrench? MOSFET developed by ON Semiconductor based on its high-performance trench process for extremely low RDS (on). It is an electronic device optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
FDW254P Features
-
Low gate charge
-
Extremely low RDS (on)
-
Available in the TSSOP-8 package
-
High-performance trench technology
-
A wide range of gate drive voltage (2.5V – 12V)
FDW254P Applications
-
Motor drive
-
Load switch
-
DC/DC conversion
-
Power management
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