IPA057N08N3G

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Mfr.Part #
IPA057N08N3G
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
IPA057N08 - 12V-300V N-CHANNEL P
Stock
4,833
In Stock :
4,833

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
13 Weeks
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-220AB
Drain-source On Resistance-Max :
0.0057Ohm
Rds On (Max) @ Id, Vgs :
5.7m Ω @ 60A, 10V
Max Dual Supply Voltage :
80V
Package / Case :
TO-220-3 Full Pack
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Gate Charge (Qg) (Max) @ Vgs :
69nC @ 10V
Halogen Free :
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds :
4750pF @ 40V
Turn On Delay Time :
17 ns
ECCN Code :
EAR99
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
9 ns
Mount :
Through Hole
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Lead Free :
Lead Free
Power Dissipation-Max :
39W Tc
Turn-Off Delay Time :
36 ns
Operating Temperature :
-55°C~175°C TJ
Pulsed Drain Current-Max (IDM) :
240A
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
Isolated
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Vgs(th) (Max) @ Id :
3.5V @ 90µA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2013
Number of Terminations :
3
Power Dissipation :
39W
Series :
OptiMOS™
Continuous Drain Current (ID) :
60A
Avalanche Energy Rating (Eas) :
290 mJ
Number of Elements :
1
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Transistor Element Material :
SILICON
Pin Count :
3
Mounting Type :
Through Hole
Packaging :
Tube
Rise Time :
42ns
Datasheets
IPA057N08N3G
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPA057N08N3G from Xinshop,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, IPA057N08N3G pinout, IPA057N08N3G datasheet PDF, IPA057N08N3G amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPA057N08N3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPA057N08N3G


N-Channel Tube 5.7m Ω @ 60A, 10V ±20V 4750pF @ 40V 69nC @ 10V TO-220-3 Full Pack

IPA057N08N3GXKSA1 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 290 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4750pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 36 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 80V, it supports the maximal dual supply voltage.By using drive voltage (6V 10V), this device helps reduce its overall power consumption.

IPA057N08N3GXKSA1 Features


the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 60A
the turn-off delay time is 36 ns
based on its rated peak drain current 240A.


IPA057N08N3GXKSA1 Applications


There are a lot of Infineon Technologies
IPA057N08N3GXKSA1 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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