IPA075N15N3
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- Mfr.Part #
- IPA075N15N3
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 491
- In Stock ：
- 491
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Halogen Free :
- Halogen Free
- JEDEC-95 Code :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 22 ns
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 43A, 10V
- Case Connection :
- Isolated
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 43A
- Terminal Position :
- Single
- Factory Lead Time :
- 13 Weeks
- Packaging :
- Tube
- Turn-Off Delay Time :
- 50 ns
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Max Dual Supply Voltage :
- 150V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2008
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 172A
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Series :
- OptiMOS™
- ECCN Code :
- EAR99
- Rise Time :
- 25ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 7280pF @ 75V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 270μA
- Power Dissipation-Max :
- 39W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 15 ns
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Datasheets
- IPA075N15N3
N-Channel Tube 7.5m Ω @ 43A, 10V ±20V 7280pF @ 75V 93nC @ 10V TO-220-3 Full Pack
IPA075N15N3GXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 7280pF @ 75V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 43A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 50 ns.Its maximum pulsed drain current is 172A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 150V, it supports maximum dual supply voltages.This device uses no drive voltage (8V 10V) to reduce its overall power consumption.
IPA075N15N3GXKSA1 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 43A
the turn-off delay time is 50 ns
based on its rated peak drain current 172A.
IPA075N15N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPA075N15N3GXKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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