IPA60R190E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Technology :

MOSFET (Metal Oxide)

Configuration :

Single

Rise Time :

10 ns

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 100 V

RoHS :

Details

Packaging :

Tube-packed

Channel Mode :

Enhancement

Power Dissipation (Max) :

34W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

63 nC @ 10 V

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Power Dissipation :

34

Operating Temperature :

-55°C ~ 150°C (TJ)

Package :

Bulk

Mounting Style :

Through Hole

Height :

16.15 mm

Vgs (Max) :

±20V

Subcategory :

MOSFETs

Transistor Type :

1 N-Channel

Series :

CoolMOS™

FET Feature :

-

Width :

4.85 mm

Package / Case :

PG-TO220-3

FET Type :

N-Channel

Number of Channels :

1 Channel

Mounting Type :

Through Hole

Supplier Device Package :

PG-TO220-3-111

Drain to Source Voltage (Vdss) :

600 V

Brand :

Infineon Technologies

Product Category :

MOSFET

Length :

10.65 mm

Tradename :

CoolMOS

Drive Voltage (Max Rds On, Min Rds On) :

10V

Continuous Drain Current Id :

20.2

Channel Type :

N

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

190mOhm @ 9.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

20.2A (Tc)

Vgs(th) (Max) @ Id :

3.5V @ 630μA

Manufacturer :

Infineon

Product Status :

Active