IPB019N06L3GATMA1
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- Mfr.Part #
- IPB019N06L3GATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 120A D2PAK
- Stock
- 1,501
- In Stock ：
- 1,501
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Series :
- OptiMOS™
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Published :
- 2008
- Turn-Off Delay Time :
- 131 ns
- Number of Channels :
- 1
- Manufacturer Package Identifier :
- PG-TO-263-3
- Max Junction Temperature (Tj) :
- 175°C
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 13 Weeks
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Rise Time :
- 79ns
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 28000pF @ 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 166nC @ 4.5V
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 35 ns
- ECCN Code :
- EAR99
- Lead Free :
- Contains Lead
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 250W
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 1.9m Ω @ 100A, 10V
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 120A
- Vgs(th) (Max) @ Id :
- 2.2V @ 196μA
- Gate to Source Voltage (Vgs) :
- 20V
- Halogen Free :
- Halogen Free
- Pbfree Code :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- Pulsed Drain Current-Max (IDM) :
- 480A
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 250W Tc
- Height :
- 4.57mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Max Dual Supply Voltage :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 38 ns
- Threshold Voltage :
- 1.7V
- Datasheets
- IPB019N06L3GATMA1
N-Channel Tape & Reel (TR) 1.9m Ω @ 100A, 10V ±20V 28000pF @ 30V 166nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB019N06L3GATMA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 28000pF @ 30V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 131 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 480A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 60V power, it supports a dual voltage supply of up to maximum.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.7V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IPB019N06L3GATMA1 Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 131 ns
based on its rated peak drain current 480A.
a threshold voltage of 1.7V
IPB019N06L3GATMA1 Applications
There are a lot of Infineon Technologies
IPB019N06L3GATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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