IPB022N04LG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

167W (Tc)

Number of Terminals :

2

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

90 A

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

167 W

Pulsed Drain Current-Max (IDM) :

400 A

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 95µA

Continuous Drain Current Id :

90

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.0029 Ω

Pin Count :

4

Product Status :

Active

Vgs (Max) :

±20V

JESD-609 Code :

e3

JEDEC-95 Code :

TO-263AB

Channel Type :

N

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

166 nC @ 10 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

-

FET Type :

N-Channel

Number of Elements :

1

Avalanche Energy Rating (Eas) :

150 mJ

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

40 V

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 90A, 10V

Operating Mode :

ENHANCEMENT MODE

Technology :

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds :

13000 pF @ 20 V

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Subcategory :

FET General Purpose Power

Series :

OptiMOS™ 3

Current - Continuous Drain (Id) @ 25°C :

90A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Transistor Application :

SWITCHING

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Supplier Device Package :

PG-TO263-3-2

Package :

Bulk

Surface Mount :

yes

Operating Temperature :

-55°C ~ 175°C (TJ)

Manufacturer :

Infineon Technologies AG

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE