IPB034N06N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

100A

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain to Source Voltage (Vdss) :

60V

Vgs (Max) :

±20V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

149 mJ

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G6

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 100A, 10V

Pbfree Code :

yes

Power Dissipation-Max :

167W Tc

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 93µA

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Pin Count :

7

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0034Ohm

Reach Compliance Code :

Unknown

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Case Connection :

DRAIN

ECCN Code :

EAR99

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

400A

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

11000pF @ 30V

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Published :

2011

JESD-609 Code :

e3