IPB06N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 30A, 10V

Number of Terminations :

2

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2653pF @ 15V

Current Rating :

50A

Avalanche Energy Rating (Eas) :

225 mJ

Drain-source On Resistance-Max :

0.0095Ohm

Rise Time :

25ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation-Max :

83W Tc

Lead Free :

Contains Lead

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

OptiMOS™

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

50A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Published :

2003

Drain Current-Max (Abs) (ID) :

91A

FET Type :

N-Channel

ECCN Code :

EAR99

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

220

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Pin Count :

4

Voltage - Rated DC :

25V

Vgs(th) (Max) @ Id :

2V @ 40µA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V