IPB09N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Case Connection :

DRAIN

Power Dissipation-Max :

63W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Rise Time :

88ns

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

75 mJ

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

4

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0151Ohm

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

50A

Published :

2003

Number of Elements :

1

Additional Feature :

LOGIC LEVEL COMPATIBLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Transistor Application :

SWITCHING

Voltage - Rated DC :

25V

Vgs(th) (Max) @ Id :

2V @ 20μA

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1642pF @ 15V

FET Type :

N-Channel

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 30A, 10V

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

50A

Terminal Finish :

Tin/Lead (Sn/Pb)

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Terminal Position :

Single

Terminal Form :

Gull wing