IPB60R165CPATMA1
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- Mfr.Part #
- IPB60R165CPATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 21A TO263-3
- Stock
- 34,897
- In Stock ：
- 34,897
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-30 Code :
- R-PSSO-G2
- Avalanche Energy Rating (Eas) :
- 522 mJ
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 21A
- Power Dissipation-Max :
- 192W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Published :
- 2008
- Transistor Element Material :
- SILICON
- Max Dual Supply Voltage :
- 600V
- Packaging :
- Tape and Reel (TR)
- Halogen Free :
- Halogen Free
- Series :
- CoolMOS™
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- Power Dissipation :
- 192W
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 12A, 10V
- Terminal Position :
- Single
- Factory Lead Time :
- 40 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Current Rating :
- 21A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time :
- 12 ns
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Mount :
- Surface Mount
- Pbfree Code :
- No
- Voltage - Rated DC :
- 600V
- Pin Count :
- 4
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 5 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 100V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Turn-Off Delay Time :
- 50 ns
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Rise Time :
- 5ns
- Vgs(th) (Max) @ Id :
- 3.5V @ 790μA
- Datasheets
- IPB60R165CPATMA1
N-Channel Tape & Reel (TR) 165m Ω @ 12A, 10V ±20V 2000pF @ 100V 52nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB60R165CPATMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 522 mJ.The maximum input capacitance of this device is 2000pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 21A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 50 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 600V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPB60R165CPATMA1 Features
the avalanche energy rating (Eas) is 522 mJ
a continuous drain current (ID) of 21A
the turn-off delay time is 50 ns
IPB60R165CPATMA1 Applications
There are a lot of Infineon Technologies
IPB60R165CPATMA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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