IPB60R385CP
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- Mfr.Part #
- IPB60R385CP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 3,978
- In Stock ：
- 3,978
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 790pF @ 100V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 650V
- Number of Pins :
- 3
- Power Dissipation-Max :
- 83W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 340µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Halogen Free :
- Halogen Free
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Published :
- 2006
- Turn-Off Delay Time :
- 40 ns
- Pin Count :
- 4
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 3 V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 9A
- Turn On Delay Time :
- 10 ns
- Vgs (Max) :
- ±20V
- Rise Time :
- 5ns
- Drain to Source Voltage (Vdss) :
- 600V
- Threshold Voltage :
- 3V
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 5 ns
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- CoolMOS™
- Rds On (Max) @ Id, Vgs :
- 385m Ω @ 5.2A, 10V
- Power Dissipation :
- 83W
- Datasheets
- IPB60R385CP
N-Channel Tape & Reel (TR) 385m Ω @ 5.2A, 10V ±20V 790pF @ 100V 22nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB60R385CPATMA1 Overview
A device's maximum input capacitance is 790pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 40 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPB60R385CPATMA1 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 40 ns
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)
IPB60R385CPATMA1 Applications
There are a lot of Infineon Technologies
IPB60R385CPATMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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