IPB80N04S204ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Power Dissipation-Max :

300W Tc

Fall Time (Typ) :

32 ns

Operating Temperature :

-55°C~175°C TJ

Max Dual Supply Voltage :

40V

Rise Time :

45ns

Continuous Drain Current (ID) :

80A

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

26 ns

Series :

OptiMOS™

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

810 mJ

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Mount :

Surface Mount

Vgs (Max) :

±20V

Published :

2006

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

56 ns

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

80A Tc

ECCN Code :

EAR99

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 80A, 10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)