IPP180N10N3GXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn-Off Delay Time :

19 ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Mount :

Through Hole

Pin Count :

3

Number of Terminations :

3

Fall Time (Typ) :

5 ns

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

50 mJ

Rds On (Max) @ Id, Vgs :

18m Ω @ 33A, 10V

Max Dual Supply Voltage :

100V

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

43A

Power Dissipation :

71W

Mounting Type :

Through Hole

Number of Elements :

1

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Published :

2008

Package / Case :

TO-220-3

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Turn On Delay Time :

12 ns

Factory Lead Time :

13 Weeks

Vgs(th) (Max) @ Id :

3.5V @ 33μA

Power Dissipation-Max :

71W Tc

Pbfree Code :

yes

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V