IPP65R310CFDAAKSA1
- Mfr.Part #
- IPP65R310CFDAAKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 11.4A TO220-3
- Stock
- 17,438
- In Stock :
- 17,438
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1110pF @ 100V
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Max Dual Supply Voltage :
- 650V
- Mount :
- Through Hole
- Published :
- 2008
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Number of Pins :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Contains Lead
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 45 ns
- Rds On (Max) @ Id, Vgs :
- 310m Ω @ 4.4A, 10V
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 11.4A
- Fall Time (Typ) :
- 7 ns
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Power Dissipation-Max :
- 104.2W Tc
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4.5V @ 440μA
- Turn On Delay Time :
- 11 ns
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Operating Temperature :
- -40°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 7.5ns
- Additional Feature :
- High Reliability
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Halogen Free
- Factory Lead Time :
- 16 Weeks
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 11.4A Tc
- Pbfree Code :
- No
- Datasheets
- IPP65R310CFDAAKSA1

N-Channel Tube 310m Ω @ 4.4A, 10V ±20V 1110pF @ 100V 41nC @ 10V TO-220-3
IPP65R310CFDAAKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1110pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 650V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPP65R310CFDAAKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 11.4A
the turn-off delay time is 45 ns
IPP65R310CFDAAKSA1 Applications
There are a lot of Infineon Technologies
IPP65R310CFDAAKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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