IPP80N08S207AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

80A

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Rise Time :

50ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

7.4m Ω @ 80A, 10V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

Series :

OptiMOS™

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

75V

Avalanche Energy Rating (Eas) :

810 mJ

Lead Free :

Contains Lead

Packaging :

Tube

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

300W Tc

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0074Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Package / Case :

TO-220-3

Published :

2006

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

61 ns

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Fall Time (Typ) :

30 ns

Turn On Delay Time :

26 ns

Number of Elements :

1

Terminal Finish :

Tin (Sn)