IPS80R600P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

60W Tc

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.4A, 10V

JESD-609 Code :

e3

Number of Elements :

1

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 500V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Terminal Position :

Single

Series :

CoolMOS™ P7

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 170μA

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

800V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.6Ohm

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

800V

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

22A

Case Connection :

DRAIN

Package / Case :

TO-251-3 Stub Leads, IPak

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Avalanche Energy Rating (Eas) :

20 mJ