IPW60R060C7
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- Mfr.Part #
- IPW60R060C7
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IPW60R060 - 600V COOLMOS N-CHANN
- Stock
- 44,572
- In Stock ：
- 44,572
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- CoolMOS™ C7
- Halogen Free :
- Halogen Free
- Number of Elements :
- 1
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Max Dual Supply Voltage :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 800μA
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 2850pF @ 400V
- Package / Case :
- TO-247-3
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Terminal Finish :
- Tin (Sn)
- Published :
- 2008
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 159 mJ
- Factory Lead Time :
- 18 Weeks
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 15.9A, 10V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Power Dissipation-Max :
- 162W Tc
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 35A
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.06Ohm
- Datasheets
- IPW60R060C7
N-Channel Tube 60m Ω @ 15.9A, 10V ±20V 2850pF @ 400V 68nC @ 10V TO-247-3
IPW60R060C7XKSA1 Description
The Cool MOS Cool MOS C7 IPW60R060C7XKSA1 is a revolutionary high-voltage power MOSFET technology designed by Infineon Technologies based on the principle of SJ. The 600V CoolMOS C7 series combines the experience of leading SJ MOSFET suppliers and best-in-class innovation.
The 600V C7 is the first technology in history with a power of * A less than 1 ohm * mm.
IPW60R060C7XKSA1 Features
?Suitable for hard and soft switching( PFCand high performance LLC)
?Increased MOSFET dv/dtruggednessto120V/ns
?Increased efficiency due t o b e st in class FOMRDS(on)*Eoss and RDS(on)*Qg
?Best in class RDS(on)/package
?Qualified for industrial grade applications according to JEDEC(J-STD20 and JESD22)
IPW60R060C7XKSA1 Applications
PFC stages and PWM stages(TTF,LLC)for high power/performance
SM PSe.g.Computing,Server,Telecom,UPS and Solar.
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