IR2111SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Driven Configuration :

Half-Bridge

REACH SVHC :

No SVHC

Rise Time :

130ns

Number of Outputs :

2

Turn On Delay Time :

750 ns

Min Output Voltage :

10V

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Channel Type :

SYNCHRONOUS

Power Supplies :

15V

Gate Type :

IGBT, N-Channel MOSFET

Number of Functions :

1

Number of Pins :

8

Nominal Supply Current :

180μA

Max Supply Current :

180μA

Output Voltage :

620V

Base Part Number :

IR2111SPBF

High Side Voltage - Max (Bootstrap) :

600V

Max Output Voltage :

20V

Logic Voltage - VIL, VIH :

8.3V 12.6V

Max Power Dissipation :

625mW

Mount :

Surface Mount

Number of Terminations :

8

Published :

1996

Factory Lead Time :

12 Weeks

Length :

4.9784mm

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

Gull wing

Radiation Hardening :

No

Mounting Type :

Surface Mount

Lead Free :

Lead Free

JESD-609 Code :

e3

Termination :

SMD/SMT

Input Type :

Non-Inverting

Turn On Time :

0.95 μs

Supply Voltage :

15V

Turn-Off Delay Time :

150 ns

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Fall Time (Typ) :

65 ns

High Side Driver :

yes

RoHS Status :

ROHS3 Compliant

Width :

3.9878mm

Current - Peak Output (Source, Sink) :

250mA 500mA

Propagation Delay :

950 ns

Max Output Current :

500mA

Voltage - Supply :

10V~20V

Height :

1.4986mm

Power Dissipation :

625mW

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Output Current :

200mA

Output Peak Current Limit-Nom :

0.5A

ECCN Code :

EAR99

Packaging :

Tube

Rise / Fall Time (Typ) :

80ns 40ns