IR21271SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Interface IC Type :

BUFFER OR INVERTER BASED MOSFET DRIVER

Packaging :

Tube

Terminal Position :

Dual

High Side Voltage - Max (Bootstrap) :

600V

Length :

4.9784mm

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Termination :

SMD/SMT

Output Peak Current Limit-Nom :

0.5A

Terminal Form :

Gull wing

Turn Off Time :

0.2 μs

Output Voltage :

20V

ECCN Code :

EAR99

Turn On Time :

0.25 μs

Number of Pins :

8

Channel Type :

Single

Width :

3.9878mm

Number of Outputs :

1

REACH SVHC :

No SVHC

Gate Type :

IGBT, N-Channel MOSFET

Driven Configuration :

High-Side or Low-Side

Current - Peak Output (Source, Sink) :

250mA 500mA

Voltage - Supply :

9V~20V

Resistance :

125Ohm

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Published :

1996

Propagation Delay :

250 ns

Rise Time :

130ns

Supply Voltage :

15V

Output Current :

200mA

Lead Free :

Contains Lead, Lead Free

Mounting Type :

Surface Mount

Base Part Number :

IR21271SPBF

Power Dissipation :

625mW

Factory Lead Time :

12 Weeks

Number of Functions :

1

Fall Time (Typ) :

65 ns

Nominal Supply Current :

120μA

Turn On Delay Time :

250 ns

Turn-Off Delay Time :

200 ns

Terminal Finish :

Matte Tin (Sn)

Logic Voltage - VIL, VIH :

0.8V 3V

Input Type :

Non-Inverting

High Side Driver :

yes

Max Output Current :

500mA

Max Output Voltage :

20V

Max Power Dissipation :

625mW

Mount :

Surface Mount

Height :

1.4986mm

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Min Output Voltage :

9V

JESD-609 Code :

e3

Rise / Fall Time (Typ) :

80ns 40ns

Operating Temperature :

-40°C~150°C TJ