IR2131JPBF
- Mfr.Part #
- IR2131JPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 44-LCC (J-Lead), 32 Leads
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 44PLCC
- Stock
- 9,001
- In Stock :
- 9,001
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Radiation Hardening :
- No
- Current - Peak Output (Source, Sink) :
- 250mA 500mA
- Output Current :
- 160mA
- Max Power Dissipation :
- 2W
- Output Voltage :
- 20V
- Gate Type :
- IGBT, N-Channel MOSFET
- Max Output Current :
- 500mA
- High Side Driver :
- yes
- Channel Type :
- Independent
- Power Supplies :
- 15V
- Propagation Delay :
- 2 μs
- Terminal Finish :
- Matte Tin (Sn)
- Nominal Supply Current :
- 4.5mA
- RoHS Status :
- ROHS3 Compliant
- Terminal Pitch :
- 1.27mm
- Supply Voltage :
- 15V
- Width :
- 16.6624mm
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 100 ns
- Terminal Position :
- QUAD
- Turn-Off Delay Time :
- 600 ns
- HTS Code :
- 8542.39.00.01
- Terminal Form :
- J BEND
- JESD-30 Code :
- S-PQCC-J32
- Published :
- 1996
- Power Dissipation :
- 2W
- Mount :
- Surface Mount
- Resistance :
- 75Ohm
- Input Type :
- Inverting
- Base Part Number :
- IR2131JPBF
- Package / Case :
- 44-LCC (J-Lead), 32 Leads
- ECCN Code :
- EAR99
- Max Supply Current :
- 4.5mA
- JESD-609 Code :
- e3
- Rise Time :
- 150ns
- Factory Lead Time :
- 19 Weeks
- Number of Terminations :
- 32
- Turn On Delay Time :
- 1.3 μs
- Operating Temperature :
- -40°C~150°C TJ
- Voltage - Supply :
- 10V~20V
- Number of Functions :
- 3
- Driven Configuration :
- Half-Bridge
- Number of Pins :
- 44
- High Side Voltage - Max (Bootstrap) :
- 600V
- Output Peak Current Limit-Nom :
- 0.5A
- Height :
- 4.572mm
- Turn Off Time :
- 1 μs
- Logic Voltage - VIL, VIH :
- 0.8V 2.2V
- Length :
- 16.6624mm
- Rise / Fall Time (Typ) :
- 80ns 40ns
- Number of Drivers :
- 6
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Datasheets
- IR2131JPBF

Gate Drivers Infineon Technologies IR2131JPBF Overview
Introducing the IR2131JPBF from Infineon Technologies, a robust gate driver specifically designed to optimize the performance of half-bridge circuits. This IC gate driver combines advanced technology and precision engineering, making it an ideal solution for high-efficiency applications that require reliable switching. The IR2131JPBF is engineered to drive both N-channel and P-channel MOSFETs and IGBTs, ensuring versatile compatibility and enhanced performance in a variety of systems. The integration of this Gate Drivers Infineon Technologies IR2131JPBF enhances system reliability and efficiency, making it a preferred choice for developers looking to improve power management and conversion.
IR2131JPBF Features
The IR2131JPBF offers several key features that distinguish it from other gate drivers in the market. It provides a high-voltage capability of up to 600V, making it suitable for handling significant power levels. The device also supports three-phase motor applications by enabling better control over the half-bridge configurations. Its built-in protective features, such as under-voltage lockout, over-current shutdown, and thermal shutdown, ensure safe operation under a wide range of conditions, thus safeguarding your equipment from potential damage.
IR2131JPBF Applications
- Electric Vehicle Powertrains: Utilized in the driving of MOSFETs and IGBTs in electric vehicle (EV) inverters, enhancing efficiency and reliability in power conversion.
- Solar Inverters: Key component in solar power systems, converting DC to AC power efficiently while ensuring robust performance and longevity.
- UPS Systems: Critical in uninterruptible power supplies to maintain consistent operation and protection during power fluctuations and outages.
- Induction Heating Systems: Drives components in high-frequency induction heating, providing precise control to achieve energy efficiency and superior heat management.
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