IXFA3N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Element Configuration :

Single

Product Type :

MOSFET

Supplier Device Package :

TO-263 (IXFA)

Transistor Type :

1 N-Channel

Published :

2000

Mount :

Surface Mount

Packaging :

Tube

Subcategory :

MOSFETs

Maximum Operating Temperature :

+ 150 C

Reach Compliance Code :

not_compliant

Tradename :

HyperFET

Series :

HiPerFET™

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Power Dissipation (Max) :

100W (Tc)

Pbfree Code :

yes

Number of Terminations :

2

Pin Count :

4

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSSO-G2

Transistor Polarity :

N-Channel

DS Breakdown Voltage-Min :

800 V

Mounting Style :

SMD/SMT

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

100W Tc

Number of Elements :

1

Fall Time (Typ) :

14 ns

Pulsed Drain Current-Max (IDM) :

14.4A

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Avalanche Energy Rating (Eas) :

400 mJ

Drain to Source Breakdown Voltage :

800V

Number of Channels :

1 Channel

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

3.6A

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Number of Terminals :

2

Length :

9.9 mm

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Configuration :

Single

Manufacturer :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

FET Feature :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

4.5 mm

Channel Mode :

Enhancement

Polarity/Channel Type :

N-Channel

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

685pF @ 25V

JESD-609 Code :

e3

Rise Time :

11ns

Terminal Finish :

Matte Tin (Sn)

Product Category :

MOSFET

Turn-Off Delay Time :

25 ns

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

800V

Power Dissipation :

100W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

3.6 Ω

Case Connection :

DRAIN

Width :

9.2 mm

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-263

Additional Feature :

AVALANCHE RATED

Minimum Operating Temperature :

- 55 C

Product Status :

Active

Base Product Number :

IXFA3

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 500mA, 10V

Gate to Source Voltage (Vgs) :

20V