IXFA6N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Number of Pins :

3

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 25V

Surface Mount :

yes

Reach Compliance Code :

not_compliant

Rds On Max :

2.4 Ω

Length :

9.65 mm

Transistor Polarity :

N-Channel

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

250W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

6A

Continuous Drain Current (ID) :

6A

Terminal Form :

Gull wing

Channel Mode :

Enhancement

Case Connection :

DRAIN

Base Product Number :

IXFA6N120

Rise Time :

11 ns

FET Feature :

--

Manufacturer :

IXYS

Polarity/Channel Type :

N-Channel

Pin Count :

3

Number of Elements :

1

Drain to Source Resistance :

2.4 Ω

JEDEC-95 Code :

TO-263AA

Terminal Position :

Single

Minimum Operating Temperature :

- 55 C

HTS Code :

8541.90.00.00

Product Status :

Active

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Input Capacitance :

2.83 nF

Height :

4.83 mm

Pulsed Drain Current-Max (IDM) :

18A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Published :

2011

Vgs (Max) :

±30V

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

250 W

Number of Terminals :

2

Qualification Status :

Not Qualified

Power Dissipation (Max) :

250W (Tc)

DS Breakdown Voltage-Min :

1200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

JESD-609 Code :

e3

Tradename :

HiPerFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

30 Weeks

Product Category :

MOSFET

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-263 (IXFA)

Type :

Polar HiPerFET Power MOSFET

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

6A Tc

RoHS :

Compliant

Operating Temperature :

-55°C~150°C TJ

Brand :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

1200V

Transistor Element Material :

SILICON

Width :

10.41 mm

Avalanche Energy Rating (Eas) :

300 mJ

Mounting Style :

SMD/SMT

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Surface Mount

Mount :

Surface Mount

Lead Free :

Lead Free

Packaging :

Tube

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

5V @ 1mA

Series :

HiPerFET™, PolarP2™

ECCN Code :

EAR99

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

0.0024Ohm

Product Type :

MOSFET

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 500mA, 10V

Power Dissipation-Max (Abs) :

250 W