IXFB110N60P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

Package :

Tube

Turn-Off Delay Time :

77 ns

Transistor Application :

SWITCHING

RoHS :

Details

Factory Lead Time :

26 Weeks

Tradename :

HiPerFET

Mount :

Through Hole

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Base Product Number :

IXFB110

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

PLUS264™

Mounting Type :

Through Hole

Brand :

IXYS

Fall Time (Typ) :

11 ns

Rise Time :

19ns

Minimum Operating Temperature :

-55 °C

Product Type :

MOSFET

Configuration :

Single

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Width :

5.31mm

Pulsed Drain Current-Max (IDM) :

275A

Number of Terminations :

3

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

5V @ 8mA

Product Status :

Active

Length :

20.29mm

Element Configuration :

Single

Case Connection :

DRAIN

Package / Case :

TO-264-3, TO-264AA

Number of Pins :

264

Rds On (Max) @ Id, Vgs :

56m Ω @ 55A, 10V

FET Feature :

--

Channel Type :

N

Drain-source On Resistance-Max :

0.056Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

26.59mm

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

18000pF @ 25V

Package Type :

PLUS264

Power Dissipation (Max) :

1890W (Tc)

Channel Mode :

Enhancement

Series :

HiPerFET™, Polar3™

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

245nC @ 10V

Threshold Voltage :

5V

Number of Elements per Chip :

1

Power Dissipation-Max :

1890W Tc

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

3000 mJ

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Maximum Operating Temperature :

+150 °C

Turn On Delay Time :

63 ns

Transistor Type :

1 N-Channel

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

600V

Continuous Drain Current (ID) :

110A

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

600V

Packaging :

Tube

Published :

2011

Power Dissipation :

1.89kW

Vgs (Max) :

±30V