IXFC30N60P
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- Mfr.Part #
- IXFC30N60P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15A ISOPLUS220
- Stock
- 29,986
- In Stock ：
- 29,986
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 15A, 10V
- Fall Time (Typ) :
- 25 ns
- JESD-30 Code :
- R-PSIP-T3
- Drain-source On Resistance-Max :
- 0.25Ohm
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- THROUGH-HOLE
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Case Connection :
- Isolated
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package :
- Tube
- Package / Case :
- ISOPLUS220™
- Rise Time :
- 20ns
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 3
- Turn-Off Delay Time :
- 75 ns
- DS Breakdown Voltage-Min :
- 600 V
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 166W Tc
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 80A
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Manufacturer :
- IXYS Corporation
- Continuous Drain Current (ID) :
- 15A
- Base Product Number :
- IXFC30N60
- Drain to Source Voltage (Vdss) :
- 600V
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 3820pF @ 25V
- Terminal Position :
- Single
- Vgs (Max) :
- ±30V
- Voltage - Rated DC :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- Packaging :
- Tube
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 600V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Status :
- Obsolete
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Power Dissipation (Max) :
- 166W (Tc)
- Mounting Type :
- Through Hole
- Current Rating :
- 30A
- Power Dissipation :
- 166W
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supplier Device Package :
- ISOPLUS220™
- JESD-609 Code :
- e1
- FET Feature :
- --
- Series :
- HiPerFET™, PolarHT™
- Datasheets
- IXFC30N60P
N-Channel Tube 250m Ω @ 15A, 10V ±30V 3820pF @ 25V 85nC @ 10V 600V ISOPLUS220™
IXFC30N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3820pF @ 25V.This device conducts a continuous drain current (ID) of 15A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFC30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXFC30N60P Applications
There are a lot of IXYS
IXFC30N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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