IXFH22N55

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

88A

Power Dissipation-Max (Abs) :

300 W

Pbfree Code :

yes

FET Type :

N-Channel

Package :

Tube

Continuous Drain Current (ID) :

22A

Turn Off Time-Max (toff) :

150ns

Rise Time :

43ns

RoHS Status :

RoHS Compliant

Base Product Number :

IXFH22

Manufacturer :

IXYS Corporation

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

22 A

Number of Elements :

1

Fall Time (Typ) :

40 ns

Voltage - Rated DC :

550V

Moisture Sensitivity Level (MSL) :

Not Applicable

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-247AD (IXFH)

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation Ambient-Max :

300 W

Power Dissipation (Max) :

300W (Tc)

Product Status :

Obsolete

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Current Rating :

22A

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.27Ohm

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

550V

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Lead Free :

Lead Free

Turn-Off Delay Time :

70 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

270m Ω @ 11A, 10V

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

550 V

Package Shape :

RECTANGULAR

Number of Terminals :

3

Number of Pins :

3

JEDEC-95 Code :

TO-247

FET Feature :

--

Pin Count :

3

Drain to Source Voltage (Vdss) :

550V

Reach Compliance Code :

Compliant

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Series :

HiPerFET™

Gate to Source Voltage (Vgs) :

20V

Turn On Time-Max (ton) :

100ns

Terminal Position :

Single

Case Connection :

DRAIN

Power Dissipation-Max :

300W Tc

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2000

Power Dissipation :

300W