IXFH22N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

5.5V

Drain to Source Breakdown Voltage :

600V

Product Status :

Active

Configuration :

Single

Number of Elements :

1

Mounting Style :

Through Hole

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

16.26 mm

Pin Count :

3

Transistor Element Material :

SILICON

Mount :

Through Hole

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

350m Ω @ 11A, 10V

Height :

25.96mm

DS Breakdown Voltage-Min :

600 V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Subcategory :

MOSFETs

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Vgs (Max) :

±30V

Turn On Delay Time :

20 ns

Element Configuration :

Single

Package :

Tube

Rise Time :

20ns

Power Dissipation (Max) :

400W (Tc)

Product Category :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Number of Terminals :

3

Surface Mount :

No

Series :

HiPerFET™, PolarHT™

Drain to Source Voltage (Vdss) :

600V

Tradename :

HiPerFET

Terminal Position :

Single

Manufacturer :

IXYS

Width :

5.3 mm

RoHS Status :

ROHS3 Compliant

Package Shape :

RECTANGULAR

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Base Product Number :

IXFH22

Maximum Operating Temperature :

+ 150 C

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-247AD (IXFH)

Continuous Drain Current (ID) :

22A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Channel Mode :

Enhancement

JEDEC-95 Code :

TO-247AD

Published :

2006

Pbfree Code :

yes

Factory Lead Time :

30 Weeks

Additional Feature :

AVALANCHE RATED

Power Dissipation :

400W

Brand :

IXYS

RoHS :

Details

Fall Time (Typ) :

23 ns

Number of Channels :

1

Avalanche Energy Rating (Eas) :

1000 mJ

Voltage - Rated DC :

600V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pulsed Drain Current-Max (IDM) :

66A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Current Rating :

22A

FET Feature :

--

Max Junction Temperature (Tj) :

150°C

Drain-source On Resistance-Max :

0.35 Ω

Packaging :

Tube

Transistor Type :

1 N-Channel

Number of Terminations :

3

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Polarity/Channel Type :

N-Channel

Package / Case :

TO-247-3

Turn-Off Delay Time :

60 ns

ECCN Code :

EAR99

JESD-609 Code :

e1

Type :

PolarHV HiPerFET Power MOSFET

FET Type :

N-Channel

Product Type :

MOSFET

Power Dissipation-Max :

400W Tc