IXFH42N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

300W Tc

Turn-Off Delay Time :

72 ns

Series :

HiPerFET™

Pulsed Drain Current-Max (IDM) :

168A

Package Shape :

RECTANGULAR

Width :

5.3 mm

Product Type :

MOSFET

Packaging :

Tube

Power Dissipation :

300W

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

Power Dissipation-Max (Abs) :

300 W

Number of Elements :

1

Package / Case :

TO-247-3

Number of Terminals :

3

Terminal Position :

Single

DS Breakdown Voltage-Min :

200 V

Length :

16.26 mm

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

200V

Minimum Operating Temperature :

- 55 C

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Vgs(th) (Max) @ Id :

4V @ 4mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.06Ohm

Product Category :

MOSFET

Rise Time :

15ns

Base Product Number :

IXFH42

Brand :

IXYS

Drain Current-Max (Abs) (ID) :

42 A

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Mounting Style :

Through Hole

Element Configuration :

Single

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Number of Pins :

3

Reach Compliance Code :

Compliant

Surface Mount :

No

Manufacturer :

IXYS

Fall Time (Typ) :

16 ns

Rds On (Max) @ Id, Vgs :

60m Ω @ 500mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Gate to Source Voltage (Vgs) :

20V

RoHS :

Details

Tradename :

HyperFET

Mounting Type :

Through Hole

Power Dissipation Ambient-Max :

300 W

Case Connection :

DRAIN

Number of Terminations :

3

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Continuous Drain Current (ID) :

42A

Drain to Source Voltage (Vdss) :

200V

Height :

21.46 mm

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Status :

Active

Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

300W (Tc)

Factory Lead Time :

8 Weeks

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

Not Applicable

ECCN Code :

EAR99

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel

Channel Mode :

Enhancement

Drain to Source Breakdown Voltage :

200V

Supplier Device Package :

TO-247AD (IXFH)

Transistor Type :

1 N-Channel

FET Feature :

--

Published :

2000

Current Rating :

42A

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-247AD

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel